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| APTGF150H120G Full - Bridge NPT IGBT Power Module VBUS Q1 G1 Q3 G3 VCES = 1200V IC = 150A @ Tc = 80C Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - M5 power connectors * High level of integration Benefits * Outstanding performance at high frequency operation * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Low profile * RoHS compliant Max ratings 1200 200 150 300 20 961 300A @ 1200V Unit V A July, 2006 1-5 APTGF150H120G - Rev 2 E1 OUT1 OUT2 E3 Q2 G2 Q4 G4 E2 E4 0/VBUS OUT1 G1 E1 VBUS 0/VBUS G2 E2 E3 G3 OUT2 E4 G4 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Tc = 25C Tc = 80C Tc = 25C Tc = 25C Tj = 150C V W Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTGF150H120G All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions Tj = 25C VGE = 0V VCE = 1200V Tj = 125C Tj = 25C VGE =15V IC = 150A Tj = 125C VGE = VCE, IC = 5 mA VGE = 20V, VCE = 0V Min Typ 3.2 3.9 4.5 Max 350 600 3.7 6.5 500 Unit A V V nA Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 600V IC = 150A R G = 5.6 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 150A R G = 5.6 VGE = 15V Tj = 125C VBus = 600V IC = 150A Tj = 125C R G = 5.6 Min Typ 10.2 1.4 0.75 120 50 310 20 130 60 360 30 18 Max Unit nF ns ns mJ 8 Reverse diode ratings and characteristics Symbol Characteristic VRRM IRM IF VF trr Qrr Er Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25C Tj = 125C Tc = 85C IF = 150A Tj = 25C Tj = 125C Tj = 25C IF = 150A VR = 600V Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Min 1200 Typ Max 350 600 Unit V A A V ns C mJ Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse recovery Energy VR=1200V 150 2.1 1.9 120 210 11 28 3.6 9 di/dt = 3600A/s www.microsemi.com 2-5 APTGF150H120G - Rev 2 July, 2006 APTGF150H120G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 IGBT Diode 2500 -40 -40 -40 3 2 Min Typ Max 0.13 0.24 150 125 100 5 3.5 280 Unit C/W V C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz SP6 Package outline (dimensions in mm) See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com www.microsemi.com 3-5 APTGF150H120G - Rev 2 July, 2006 APTGF150H120G Typical Performance Curve Output Characteristics (V GE=15V) Output Characteristics 300 250 T J=25C TJ = 125C VGE =20V VGE=12V VGE =15V 300 250 IC (A) 200 IC (A) 200 150 100 TJ=125C VGE=9V 150 100 50 0 0 1 2 3 VCE (V) 4 5 6 50 0 0 1 2 3 4 VCE (V) 5 6 300 250 200 Transfert Characteristics 56 48 40 E (mJ) 32 24 16 TJ =25C T J=125C Energy losses vs Collector Current VCE = 600V VGE = 15V RG = 5.6 T J = 125C Eon IC (A) 150 100 50 0 5 6 7 Eoff 8 0 Eoff Er 8 9 10 11 12 0 50 100 150 IC (A) 200 250 300 V GE (V) Switching Energy Losses vs Gate Resistance 70 60 50 E (mJ) 40 30 20 10 0 0 5 10 15 20 25 30 35 40 45 50 Gate Resistance (ohms) Eoff Er VCE = 600V VGE =15V IC = 150A T J = 125C Eon Reverse Bias Safe Operating Area 350 300 250 IC (A) 200 150 100 50 0 0 300 600 900 1200 1500 VCE (V) VGE =15V TJ =125C RG=5.6 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.14 Thermal Impedance (C/W) 0.12 0.1 0.08 0.06 0.04 0.02 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 IGBT 0 0.00001 rectangular Pulse Duration (Seconds) www.microsemi.com 4-5 APTGF150H120G - Rev 2 July, 2006 APTGF150H120G Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 100 90 80 70 60 50 40 30 20 10 0 0 VCE=600V D=50% RG =5.6 TJ=125C TC=75C Forward Characteristic of diode 300 250 200 IC (A) 150 100 50 0 T J=25C T J=125C ZCS ZVS hard switching 40 80 120 IC (A) 160 200 0 0.5 1 1.5 V F (V) 2 2.5 3 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.25 Thermal Impedance (C/W) 0.9 0.2 0.15 0.1 0.05 0.7 0.5 0.3 0.1 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Single Pulse Diode rectangular Pulse Duration (Seconds) Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGF150H120G - Rev 2 Microsemi reserves the right to change, without notice, the specifications and information contained herein July, 2006 |
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